Crystal growth method and wafer
US12123105B2 · kind B2 · utility
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1References
19Claims
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Assignee
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Key dates
| Filing date | Jun 30, 2023 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided. The crystal includes multiple sub-crystals stacked along the first direction, a corresponding one of the sub-crystals is formed at each of the time points, and the sub-crystals include multiple end surfaces away from the seed crystal, so that a difference value of maximum temperatures of any two of the end surfaces is less than or equal to 20 degrees. A wafer is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.