Magnetoresistance memory device
US12125510B2 · kind B2 · utility
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8References
20Claims
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Key dates
| Filing date | Jul 30, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.