Doping process to refine grain size for smoother BiSb film surface

US12125512B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Quang Le · San Jose, US
• Cherngye Hwang · San Jose, US
• Brian R. York · San Jose, US
• Randy Simmons · West Chester, US
• Xiaoyong Liu · San Jose, US
• Kuok San Ho · Emerald Hills, US
• Hisashi Takano · San Jose, US
• Michael A. Gribelyuk · Stamford, US
• Xiaoyu XU · San Jose, US

Key dates

• Filing date: Jun 30, 2022
• Grant date: Oct 22, 2024
• Expiry date: Nov 18, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/80
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.