Electron bias control signals for electron enhanced material processing
US12125686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2024 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | May 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/54
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.