Etching method
US12125708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Apr 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.