Technologies for plasma oxidation protection during hybrid bonding of semiconductor devices
US12125818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2022 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Apr 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0509
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technologies for plasma oxidation protection during hybrid bonding of semiconductor devices includes forming a blocking layer on a metallic bonding pad formed in a bonding surface of a semiconductor device to be bonded and performing a surface treatment on the bonding surface to increase the bonding strength of the bonding surface and contemporaneously remove the blocking layer from the metallic bonding pad. In an illustrative embodiment, the blocking layer is embodied as a self-assembled monolayer (SAM), and the surface treatment is embodied as a surface activation plasma (SAP) treatment. A diffusion barrier layer, such as a silicon carbon nitride layer, may form the bonding surface in some embodiments to reduce diffusion of the metallic bonding pad during an annealing treatment of the bonding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.