Patent · US Active

Protection device with p-n junction devices monolithically integrated in a semiconductor body

US12125841B2 · kind B2 · utility

0Cited by

1References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef-Paul Schaffer · Hersbruck, DE
Hubert Werthmann · Birkenfeld, DE
Juliane Laurer · Regensburg, DE

Key dates

Filing date	Jul 29, 2022
Grant date	Oct 22, 2024
Priority date	—
Expiry date	Nov 24, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/713

Abstract

A semiconductor device includes a semiconductor body including an upper surface, input and output terminals disposed on the upper surface of the semiconductor body, first and second p-n junction devices that are monolithically integrated in the semiconductor body, and a signal line protection circuit connected between the input and output terminals and comprising a low-pass filter and a voltage clamping device, wherein each of the low-pass filter and the voltage clamping device include the first and second p-n junction devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.