Image sensor and method of making

US12125864B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Po-Han Chen · Hsinchu, TW
• Chen-Chun Chen · Hsinchu, TW
• Fu-Cheng Chang · Tainan, TW
• Kuo-Cheng Lee · Tainan, TW

Key dates

• Filing date: May 17, 2023
• Grant date: Oct 22, 2024
• Expiry date: May 17, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A method of making an image sensor includes depositing a shield layer over a substrate, wherein the substrate comprises a first photodiode (PD) and a second PD. The method further includes etching the shield layer to define a first recess aligned with the first PD and a second recess aligned with the second PD. The method further includes depositing a flicker reduction layer in the first recess and in the second recess. The method further includes etching the flicker reduction layer to remove the flicker reduction layer from the first recess.