Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric
US12125893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2023 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Apr 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.