Semiconductor device and method for manufacturing the same
US12125902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jan 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has an element ratio of the first group III element to the second group III element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.