Non-volatile memory device and method for manufacturing the same
US12127403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2023 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A non-volatile memory device and its manufacturing method are provided. The non-volatile memory device includes a substrate and a plurality of first floating gates and a plurality of second floating gates formed on the substrate. The substrate includes a center region and two border regions located on opposite sides of the center region. The center region and two border regions are located in an array region. The first floating gates are located in the center region, and the second floating gates are located in one of the border regions. Each of the first floating gates has a first width, and each of the second floating gates has a second width less than the first width. There is a first spacing between the first floating gates, and there is a second spacing which is greater than the first spacing between the second floating gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.