CMP process and methods thereof
US12131911B2 · kind B2 · utility
0Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2022 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.