Method for fabricating a semiconductor device
US12131950B2 · kind B2 · utility
0Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2023 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Dec 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.