Ferroelectric semiconductor device and method of extracting defect density of the same
US12132109B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Feb 22, 2022 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Dec 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a ferroelectric semiconductor device and a method of extracting a defect density of the same. A ferroelectric electronic device includes a first layer, an insulating layer including a ferroelectric layer and a first interface that is adjacent to the first layer, and an upper electrode over the insulating layer, wherein the insulating layer has a bulk defect density of 1016 cm−3eV−1 or more and an interface defect density of 1010 cm−2eV−1 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.