Semiconductor body, avalanche photodiode and method for fabricating a semiconductor body

US12132132B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventor

• Georg Röhrer · Graz, AT

Key dates

• Filing date: May 29, 2020
• Grant date: Oct 29, 2024
• Expiry date: Jul 22, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/121

Abstract

A semiconductor body comprises a buried layer of a first type of conductivity, a first region of the first type of conductivity, a shallow region of a second type of conductivity at a first surface of the semiconductor body, a sinker of the first type of conductivity located at the first surface of the semiconductor body, and a separating region of the first type of conductivity encircling at least one of the sinker and the buried layer. The first region is between the buried layer and the shallow region.