P-type doping in GaN LEDs for high speed operation at low current densities
US12132146B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 3, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.