Method for producing a nitride layer
US12134836B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.