Method of manufacturing a semiconductor device
US12135501B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Aug 3, 2023 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Aug 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.