Memory programming operation comprising preprogramming memory cells
US12136461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2021 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.