Semiconductor device fabrication apparatus
US12136539B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2024 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Apr 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32642
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of −0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of −0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.