Toposelective vapor deposition using an inhibitor
US12136552B2 · kind B2 · utility
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21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Oct 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.