Patent · US Active

Three-dimensional memory devices and fabricating methods thereof

US12136599B2 · kind B2 · utility

0Cited by

3References

18Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

He Chen · 红钢城街道, CN
Shu Wu · 红钢城街道, CN
Zhen Pan · Hubei, CN
Siping Hu · 红钢城街道, CN
Yi Zhao · Ithaca, US
Ziqun Hua · 红钢城街道, CN

Key dates

Filing date	Feb 2, 2022
Grant date	Nov 5, 2024
Priority date	—
Expiry date	Oct 15, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/40
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed are three-dimensional (3D) memory devices and fabricating methods thereof. In some embodiments, a disclosed memory device comprises a wafer structure having a sealing region and a chip region. The wafer structure comprises a substrate, a memory string array on a first side of the substrate in the chip region, a first protection structure and a second protection structure on the first side of the substrate in the sealing region, and a first contact and a second contact extending through the substrate in the sealing region. The first contact is in contact with the first protection structure, and the second contact is in contact with the second protection structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.