Silicon carbide wafer and semiconductor device applied the same
US12136653B2 · kind B2 · utility
0Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2022 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.