CMP polishing pad with enhanced rate
US12138737B2 · kind B2 · utility
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4References
8Claims
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Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Dec 26, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polishing pad having a polishing portion comprising a polymer matrix and rate enhancing lamellar particles that include a phosphate or an arsenate of group III-A or group IV-A metals can be effective in chemical mechanical polishing especially when using a slurry comprising particles having a positive charge in slurry conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.