CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
US12139642B2 · kind B2 · utility
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Key dates
| Filing date | Jul 19, 2021 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | May 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:
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