Imprint method
US12140863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2022 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.