Semiconductor laser device
US12142895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2021 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Aug 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.