Ryoji Hiroyama
29Patents
7h-index
35Co-inventors
69Inventor score
Filing activity: Jul 1, 1994 → May 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5555271A | Semiconductor laser device | Electricity | 19 | Expired |
| US5559818A | Semiconductor laser device | Electricity | 17 | Expired |
| US7488613B2 | Nitride-based light-emitting device and method of manufacturing the same | Electricity | 12 | Active |
| US8022427B2 | Nitride-based semiconductor device and method of manufacturing the same | Electricity | 10 | Active |
| US5963572A | Semiconductor laser device and manufacturing method thereof | Electricity | 9 | Expired |
| US7154123B2 | Nitride-based semiconductor light-emitting device | Electricity | 8 | Expired |
| US5586136A | Semiconductor laser device with a misoriented substrate | Electricity | 8 | Expired |
| US7892874B2 | Nitride-based light-emitting device and method of manufacturing the same | Electricity | 5 | Active |
| US7592630B2 | Nitride-based light-emitting device and method of manufacturing the same | Electricity | 4 | Expired |
| US7260130B2 | Semiconductor laser device and method of fabricating the same | Electricity | 3 | Expired |
| US6044099A | Semiconductor laser device | Electricity | 3 | Expired |
| US7885304B2 | Nitride-based semiconductor laser device and method of manufacturing the same | Electricity | 2 | Active |
| US6771676B2 | Semiconductor laser device and method of fabricating the same | Electricity | 2 | Expired |
| US7512167B2 | Integrated semiconductor laser device and method of fabricating the same | Electricity | 2 | Active |
| US6768755B2 | Semiconductor laser device | Electricity | 2 | Expired |
| US6967985B2 | Surface emission semiconductor laser device | Electricity | 1 | Expired |
| US6778575B2 | AlGaInP-based high-output red semiconductor laser device | Electricity | 1 | Expired |
| US8193016B2 | Semiconductor laser device and method of manufacturing the same | Electricity | 0 | Active |
| US8750343B2 | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer | Electricity | 0 | Active |
| US7978744B2 | Nitride based semiconductor laser device with oxynitride protective films on facets | Electricity | 0 | Active |
| US12142895B2 | Semiconductor laser device | Electricity | 0 | Active |
| US7903709B2 | Semiconductor laser device and method of manufacturing the same | Electricity | 0 | Active |
| US6654397B2 | Semiconductor laser device and manufacturing method thereof | Electricity | 0 | Expired |
| US8134171B2 | Method of manufacturing semiconductor device and semiconductor device | Electricity | 0 | Active |
| US7924898B2 | Nitride based semiconductor laser device with oxynitride protective coatings on facets | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.