Semiconductor device and method for manufacturing the same
US12148713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Nov 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from wide to narrow with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.