Patent · US Active

Detection substrate and manufacturing method thereof, flat panel detector and manufacturing method thereof

US12148720B2 · kind B2 · utility

0Cited by
1References
20Claims
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Key dates

Filing dateMar 24, 2021
Grant dateNov 19, 2024
Priority date
Expiry dateMar 24, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/1898
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A detection substrate and manufacturing method thereof, a flat panel detector and manufacturing method thereof. The detection substrate includes: a substrate including a detection region, a binding region, a controllable on-off region, and a cutting region; a plurality of detection units including transistors and photosensitive devices located in the detection region, a transistor includes a gate, a first electrode and a second electrode; a photosensitive device is connected to the first or second electrode; a plurality of conductive wires, one end is connected to the gate, and the other end is extended to the binding region; a conductive ring disposed in the cutting region; a plurality of detection wires, one end is connected to the conductive ring, the other end is connected to the conductive wires, the detection wires are passed through the controllable on-off region; the detection wires located in the controllable on-off region can have a disconnected state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.