Patent · US Active

Structure of semiconductor device

US12148723B2 · kind B2 · utility

0Cited by
9References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 7, 2022
Grant dateNov 19, 2024
Priority date
Expiry dateFeb 6, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/80908
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.