Package structure and method of fabrcating the same
US12148732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Dec 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a redistribution structure includes providing a dielectric layer. The dielectric layer is patterned to form a plurality of via openings. A seed layer is formed on the dielectric layer and filling in the plurality of via openings. A patterned conductive layer is formed a on the seed layer, wherein a portion of the seed layer is exposed by the patterned conductive layer. The portion of the seed layer is removed by using an etching solution, thereby forming a plurality of conductive lines and a plurality of vias. During the removing the portion of the seed layer, an etch rate of the patterned conductive layer is less than an etch rate of the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.