Nitride-based semiconductor device and method for manufacturing the same
US12148801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a third nitride-based semiconductor layer. The first nitride-based semiconductor layer has at least one trench. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and spaced apart from the trench. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed above the second nitride-based semiconductor layer and between the source and drain electrodes, so as to at least define a drift region between the gate electrode and the drain electrode and overlaps with the trench. The third nitride-based semiconductor layer is at least disposed in the trench and extends upward from the trench to make contact with the second nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.