Multi-voltage bootstrapping drivers
US12149232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Jan 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bootstrapping circuit that utilizes multiple pre-charged capacitor voltages and applies the capacitor voltages to the high side FET of a GaN bootstrapping driver. During the pre-charging phase of the bootstrapping driver, multiple capacitors are charged in parallel to the supply voltage. During the driving phase of the bootstrapping driver, the capacitors are connected in series through a number of FETs and connected to the gate terminal of the high side FET of the bootstrapping driver. As a result, the gate-to-source voltage of the high side FET is equal to or greater than the supply voltage during the driving phase, increasing the driving capability of the high side FET and reducing the total required capacitance and die area of the bootstrapping driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.