Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
US12150303B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Apr 24, 2023 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Apr 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. The wordline levels have conductive terminal ends within control gate regions. The control gate regions are vertically spaced from one another by first insulative regions which include first insulative material. Charge-storage material is laterally outward of the conductive terminal ends, and is configured as segments. The segments of the charge-storage material are arranged one atop another and are vertically spaced from one another by second insulative regions which include second insulative material. The second insulative material has a different dielectric constant than the first insulative material. Charge-tunneling material extends vertically along the stack, and is adjacent to the segments of the charge-trapping material. Channel material extends vertically along the stack, and is adjacent to the charge-tunneling material. Some embodiments include methods of forming integrated assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.