Method of making photonic device
US12153255B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 10, 2023 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1347
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a photonic device includes depositing a cladding layer over a silicon layer. The method further includes patterning the cladding layer to expose a first portion of the silicon layer, wherein a second portion of the silicon layer is covered by the patterned cladding layer, and a waveguide portion is in the second portion of the silicon layer. The method further includes depositing a low refractive index layer directly over the patterned cladding layer, wherein a refractive index of the low refractive index layer is less than a refractive index of silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.