Semiconductor device having a 2-D material layer including a channel region and source/drain regions and method for forming the same
US12154828B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 13, 2022 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Feb 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.