Inventor · Alamo, CA, US

Chenming Hu

164Patents
45h-index
153Co-inventors
93Inventor score

Filing activity: Aug 1, 1980 → Jul 31, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6413802B1 Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture Electricity 598 Expired
US6492216B1 Method of forming a transistor with a strained channel Electricity 317 Expired
US5485031A Antifuse structure suitable for VLSI application Electricity 304 Expired
US5559368A Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation Electricity 261 Expired
US5489792A Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Electricity 253 Expired
US5448513A Capacitorless DRAM device on silicon-on-insulator substrate Physics 249 Expired
US4794565A Electrically programmable memory device employing source side injection Electricity 205 Expired
US7112495B2 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit Electricity 204 Expired
US6867433B2 Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors Electricity 201 Expired
US6855990B2 Strained-channel multiple-gate transistor Electricity 183 Expired
US5780899A Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation Electricity 172 Expired
US5982003A Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Electricity 154 Expired
US6121077A Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Electricity 146 Expired
US6300649A Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Electricity 138 Expired
US6518105B1 High performance PD SOI tunneling-biased MOSFET Emerging Cross-Sectional Technologies 130 Expired
US6855606B2 Semiconductor nano-rod devices Electricity 105 Expired
US7180134B2 Methods and structures for planar and multiple-gate transistors formed on SOI Electricity 99 Expired
US7074656B2 Doping of semiconductor fin devices Electricity 98 Expired
US5511020A Pseudo-nonvolatile memory incorporating data refresh operation Electricity 98 Expired
US8067280B2 High performance CMOS devices and methods for making same Electricity 96 Active
US6900502B2 Strained channel on insulator device Electricity 93 Expired
US6720619B1 Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices Electricity 89 Expired
US6027988A Method of separating films from bulk substrates by plasma immersion ion implantation Emerging Cross-Sectional Technologies 86 Expired
US7452778B2 Semiconductor nano-wire devices and methods of fabrication Electricity 86 Expired
US6844238B2 Multiple-gate transistors with improved gate control Electricity 83 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.