III-nitride-based semiconductor devices on patterned substrates and method of making the same
US12154864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jun 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride-based semiconductor device is provided. The III-nitride semiconductor device includes a silicon substrate having a surface with a periodic array of recesses formed therein. A discontinuous insulating layer is formed within each recess of the periodic array of recesses such that a portion of the silicon substrate surface between adjacent recesses is free from coverage of the discontinuous insulating layer. A first epitaxial III-nitride semiconductor layer is formed over the silicon substrate with the periodic array of recesses and discontinuous insulating layer formed thereon. A second III-nitride semiconductor layer is disposed over the first III-nitride semiconductor layer and has a bandgap greater than a bandgap of the first III-nitride semiconductor layer. At least one source and at least one drain are disposed over the second III-nitride semiconductor layer. A gate is also disposed over the second III-nitride semiconductor layer between the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.