Semiconductor device structure
US12154946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2023 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | May 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure includes first nanostructures formed over a substrate. The semiconductor device structure also includes a first gate structure wrapping around the first nanostructures. The semiconductor device structure also includes a first source/drain epitaxial structure formed beside the first nanostructures. The semiconductor device structure further includes a first inner spacer extending from the first gate structure to the first source/drain epitaxial structure by a first distance. The semiconductor device structure also includes second nanostructures formed over the first nanostructures. The semiconductor device structure further includes a second gate structure wrapping around the second nanostructures. The semiconductor device structure also includes a second source/drain epitaxial structure formed beside the second nanostructures. The semiconductor device structure further includes a second inner spacer extending from the second gate structure to the second source/drain epitaxial structure by a second distance, wherein the second distance is different from the first distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.