Semiconductor device and method for manufacturing the same
US12154968B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Feb 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode a first strain-compensating layer, and a first protection layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed between the source and drain electrodes. The first strain-compensating layer is disposed above the second nitride-based semiconductor layer and between the drain and gate electrodes. The first protection layer covers the first strain-compensating layer to form a first interface, in which a vertical distance between the first interface and the second nitride-based semiconductor layer increases along a direction pointing toward the drain electrode from the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.