Diffused field-effect transistor

US12154972B2 · kind B2 · utility

Assignee

• NEXCHIP SEMICONDUCTOR CORPORATION · CN

Inventors

• Menghui Wang · Shanghai, CN
• Ching-Ming Lee · Daguantang, CN
• Jinzhuan Zhu · Daguantang, CN

Key dates

• Filing date: Mar 26, 2021
• Grant date: Nov 26, 2024
• Expiry date: Mar 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A diffused field-effect transistor (FET) is disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.