Semiconductor device and method of manufacturing the same
US12159786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | May 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.