Patent · US Active

Semiconductor package with non-uniformly distributed vias

US12159829B2 · kind B2 · utility

0Cited by

3References

23Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Sergey Yuferev · Villach, AT
Robert Fehler · Regensburg, DE
Petteri Palm · Regensburg, DE

Key dates

Filing date	Jul 29, 2022
Grant date	Dec 3, 2024
Priority date	—
Expiry date	Nov 28, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/30101
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor package includes a semiconductor device embedded in an insulating layer and having a first contact pad at a first surface of the semiconductor device. An outer contact pad is positioned on a lower surface of the insulating layer. A vertical redistribution structure electrically couples the first contact pad to the outer contact pad. The first contact pad has a plurality of first via sites. A first subset of the first via sites is occupied by first vias and a second subset of the first via sites remains unoccupied and forms a first via-free zone, such that the first vias are non-uniformly distributed over the first contact pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.