Nitride-based multi-channel switching semiconductor device and method for manufacturing the same
US12159871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Mar 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a nitride-based multi-channel switching device having a plurality of transistors. The multi-channel switching device comprises a substrate, a plurality gate structures, a plurality of source electrodes and a plurality of drain electrodes. The gate structures, source electrodes and drain electrodes are grouped to form the plurality of transistors and arranged such that each gate structure disposed between a source electrode and drain electrode. Each group of the gate structures are electrically interconnected and connected to at least one gate pad corresponding to each of the transistor. Each group of the drain electrode are electrically interconnected and connected to at least one drain pad corresponding to each of the transistor. All groups of the source electrodes are electrically interconnected and connected to at least one common source pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.