Nitride-based semiconductor device and method for manufacturing the same
US12159931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Oct 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.