Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

US12159956B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Sebastian Pickel · Regensburg, DE
• Katharina Werner · Regensburg, DE
• Bernd Böhm · Regensburg, DE
• Anna Strozecka-Assig · Regensburg, DE
• Anna Nirschl · Regenstauf, DE

Key dates

• Filing date: Aug 13, 2019
• Grant date: Dec 3, 2024
• Expiry date: Feb 8, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032

Abstract

Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.