Magnetic tunnel junction structures and related methods
US12160998B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 22, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Jan 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.