I-Cheng Tung
14Patents
1h-index
51Co-inventors
49Inventor score
Filing activity: Nov 26, 2013 → Jul 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11316027B2 | Relaxor ferroelectric capacitors and methods of fabrication | Electricity | 1 | Active |
| US12328927B2 | Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures | Electricity | 0 | Active |
| US12100731B2 | Crystalline bottom electrode for perovskite capacitors and methods of fabrication | Electricity | 0 | Active |
| US12048165B2 | Ferroelectric capacitors and methods of fabrication | Electricity | 0 | Active |
| US12160998B2 | Magnetic tunnel junction structures and related methods | Electricity | 0 | Active |
| US9550166B2 | Strontium cobaltite oxygen sponge catalyst and methods of use | Chemistry; Metallurgy | 0 | Active |
| US11777029B2 | Vertical transistors for ultra-dense logic and memory applications | Electricity | 0 | Active |
| US11605670B2 | Magnetic tunnel junction structures and related methods | Electricity | 0 | Active |
| US12224309B2 | Capacitors with built-in electric fields | Electricity | 0 | Active |
| US12255225B2 | Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes | Electricity | 0 | Active |
| US11742407B2 | Multilayer high-k gate dielectric for a high performance logic transistor | Electricity | 0 | Active |
| US12170319B2 | Dual contact process with stacked metal layers | Performing Operations; Transporting | 0 | Active |
| US12183739B2 | Ribbon or wire transistor stack with selective dipole threshold voltage shifter | Performing Operations; Transporting | 0 | Active |
| US11980037B2 | Memory cells with ferroelectric capacitors separate from transistor gate stacks | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.