Polycrystalline silicon rod
US12162762B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Oct 15, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Oct 16, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.